november 2000 ? 2000 fairchild semiconductor corporation FDS3590 rev c (w) FDS3590 80v n-channel powertrench? mosfet general description this n-channel mosfet has been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. these mosfets feature faster switching and lower gate charge than other mosfets with comparable r ds(on) specifications. the result is a mosfet that is easy and safer to drive (even at very high frequencies), and dc/dc power supply designs with higher overall efficiency. features ? 6.5 a, 80 v r ds(on) = 39 m ? @ v gs = 10 v r ds(on) = 44 m ? @ v gs = 6 v ? low gate charge ? fast switching speed ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability s d s s so-8 d d d g 6 7 8 5 3 2 1 4 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 80 v v gss gate-source voltage 20 v i d drain current ? continuous (note 1a) 6.5 a ? pulsed 50 power dissipation for single operation (note 1a) 2.5 (note 1b) 1.2 p d (note 1c) 1.0 w t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 50 c/w r jc thermal resistance, junction-to-case (note 1) 25 c/w package marking and ordering information device marking device reel size tape width quantity FDS3590 FDS3590 13?? 12mm 2500 units FDS3590
FDS3590 rev c. (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain-source avalanche ratings (note 2) w dss single pulse drain-source avalanche energy v dd = 40 v, i d = 6.5 a 175 mj i ar maximum drain-source avalanche current 6.5 a off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 a 80 v ? bv dss === ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 88 mv/ c i dss zero gate voltage drain current v ds = 64 v, v gs = 0 v 1 a i gssf gate?body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?20 v, v ds = 0 v ?100 na on characteristics (note 2) v gs(th)n gate threshold voltage v ds = v gs ,i d = 250 a 24v ? v gs(th) === ? t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 c ?6 mv/ c r ds(on) static drain?source on?resistance v gs = 10 v, i d = 6.5 a v gs = 10 v, i d = 6.5 a, t j = 125 c v gs = 6 v, i d = 4.5 a 32 61 34 39 86 44 m ? i d(on) on?state drain current v gs = 10 v, v ds = 5 v 25 a g fs forward transconductance v gs = 10 v, i d = 6.5 a 25 s dynamic characteristics c iss input capacitance 1180 pf c oss output capacitance 171 pf c rss reverse transfer capacitance v ds = 40 v, v gs = 0 v, f = 1.0 mhz 50 pf switching characteristics (note 2) t d(on) turn?on delay time 11 20 ns t r turn?on rise time 8 16 ns t d(off) turn?off delay time 26 50 ns t f turn?off fall time v dd = 40 v, i d = 1 a, v gs = 10 v, r gen = 6 ? 12 25 ns q g total gate charge 25 35 nc q gs gate?source charge 4.5 nc q gd gate?drain charge v ds = 40 v, i d = 6.5 a, v gs = 10 v 5.8 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 2.1 a v sd drain?source diode forward voltage v gs = 0 v, i s = 2.1 a (note 2) 0.74 1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 50 c/w when mounted on a 1in 2 pad of 2 oz copper b) 105 c/w when mounted on a 0.04 in 2 pad of 2 oz copper c) 125 c/w when mounted on a minimum pad. FDS3590
FDS3590 rev c. (w) scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0%
FDS3590 rev c. (w) typical characteristics 0 10 20 30 40 50 02468 v ds , drain-source voltage (v) i d , drain current (a ) 6.0v 5.0v 4.5v 4.0v 3.5v v gs = 10v 0.8 1 1.2 1.4 1.6 1.8 2 0 1020304050 i d , drain current (a) r ds(on) , normalized drain-source on-resistanc e v gs = 4.0v 6.0v 5.0v 10v 4.5v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.2 0.6 1 1.4 1.8 2.2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistanc e i d = 6.5a v gs = 10v 0 0.025 0.05 0.075 0.1 246810 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 3.5 a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 10 20 30 40 23456 v gs , gate to source voltage (v) i d , drain current (a ) t a = -55 o c 25 o c 125 o c v ds = 5v 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , body diode forward voltage (v) i s , reverse drain current (a ) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDS3590
FDS3590 rev c. (w) typical characteristics 0 2 4 6 8 10 0 6 12 18 24 30 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 6.5a v ds = 10v 40v 20v 0 500 1000 1500 2000 0 20406080 v ds , drain to source voltage (v) capacitance (pf ) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a ) dc 10s 1s 100ms 100 ja = 125 o c/w t a = 25 o c 10ms 1ms 0 5 10 15 20 25 30 0.01 0.1 1 10 100 t, single pulse time (sec) p pk , maximum peak power (w) single pulse r ja = 125c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) + r ja r ja = 125 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. FDS3590
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